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PD - 97127 IRFP3206PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 200A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacitance and Avalanche SOA S l Enhanced body diode dV/dt and dI/dt Capability D G l Lead-Free TO-247AC GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 200c ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 140c A ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 IDM Pulsed Drain Current d 840 PD @TC