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PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46m l Hard Switched and High Frequency Circuits max. 1.85m G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D Avalanche SOA l Enhanced body diode dV/dt and dI/dt S Capability D G TO-247AC GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 350c ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 250c A ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195 IDM Pulsed Drain Current d 1280 PD @TC = 25 C Max