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PD - 97322IRFP4368PbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS 75Vl High Speed Power SwitchingRDS(on) typ. 1.46ml Hard Switched and High Frequency Circuits max. 1.85mGID (Silicon Limited)350AcS ID (Package Limited) 195ABenefitsl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andDAvalanche SOAl Enhanced body diode dV/dt and dI/dtSCapabilityDGTO-247ACGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25CContinuous Drain Current, VGS @ 10V (Silicon Limited) 350cID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 250cAID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195IDMPulsed Drain Current d 1280PD @TC = 25CMax