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PD - 97309A IRFP4410ZPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capacitance and Avalanche SOA S D l Enhanced body diode dV/dt and dI/dt Capability G G l Lead-Free TO-247AC S GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 97 ID @ TC = 100 C 69 A Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM 390 Pulsed Drain Current PD @TC = 25 C 230 W Maximum Power Dissipation 1.5 Linear Derating Factor W/ C VGS Gate-to-Source Voltage 20