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PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parameter distribution E VCE(on) typ. = 1.9V Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to C C low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications E E C G G C U.P.S. TO-247AC TO-247AD Welding IRG7PH35UDPbF IRG7PH35UD-EP Solar Inverter GC E Indu