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PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parameter distributionEVCE(on) typ. = 1.9V Lead-Freen-channelBenefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due toCClow VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operationApplicationsEECG G C U.P.S.TO-247AC TO-247AD WeldingIRG7PH35UDPbF IRG7PH35UD-EP Solar InverterGC E Indu