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PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching Losses IC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOA G tSC 10 s, TJ(max) =175 C Square RBSOA 100% of The Parts Tested for ILM E VCE(on) typ. = 2.0V Positive VCE (ON) Temperature Coefficient n-channel Tight Parameter Distribution Lead Free Package C E Benefits C G High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Super-247 Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation GC E G a te C o lle c to r E m itter Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Vo