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PD - 97406AIRG7PSH73K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching LossesIC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOAGtSC 10s, TJ(max) =175C Square RBSOA 100% of The Parts Tested for ILMEVCE(on) typ. = 2.0V Positive VCE (ON) Temperature Coefficientn-channel Tight Parameter Distribution Lead Free PackageCEBenefitsCG High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due toSuper-247Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel OperationGC EG a te C o lle c to r E m itterAbsolute Maximum RatingsParameter Max. UnitsVCESCollector-to-Emitter Vo