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PD - 97155 IRG7S319UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.26 V circuits in PDP applications IRP max @ TC= 25 C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead Free package C E C G G D2Pak E IRG7S319UPbF n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly effici