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IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C G IC = 60A, TC =100 C G tSC 5 s, TJ(max) = 175 C G E VCE(ON) typ. = 1.65V @ IC = 48A E C C E G G n-channel Applica ons IRGP4063D1PbF IRGP4063D1 EPbF Industrial Motor Drive G C E Inverters UPS Gate Collector Emitter Welding Features Benefits High efficiency in a wide range of applications and Low VCE(ON) and switching losses switching frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175 C performance and higher power capability Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation 5 s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environm