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IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collector EmitterWeldingFeatures Benefits High efficiency in a wide range of applications and Low VCE(ON) and switching losses switching frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and higher power capability Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation 5s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environm