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IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100 C E E E G E C tSC 5 s, TJ(max) = 175 C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Applications G C E Appliance Drives Gate Collector Emitter Inverters UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175 C performance and high power capability Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters 5 s Short C