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PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 7.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak TO-262 IRGB6B60KD IRGS6B60KD IRGSL6B60KD Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 13 IC @ TC = 100 C Continuous Collector Current 7.0 ICM Pulsed Collector Current