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IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Features Power MOSFET 13A, 500V This N-Channel enhancement mode silicon gate power field rDS(ON) = 0.400 effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of SOA is Power Dissipation Limited these power MOSFETs are designed for applications such Nanosecond Switching Speeds as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching Linear Transfer Characteristics transistors requiring high speed and low gate drive power. High Input Impedance These types can be operated directly from integrated Related Literature circuits. - TB334 Gui