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IRF450Data Sheet March 1999 File Number 1827.313A, 500V, 0.400 Ohm, N-Channel FeaturesPower MOSFET 13A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 0.400effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode of operation. All of SOA is Power Dissipation Limitedthese power MOSFETs are designed for applications such Nanosecond Switching Speedsas switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching Linear Transfer Characteristicstransistors requiring high speed and low gate drive power. High Input ImpedanceThese types can be operated directly from integrated Related Literaturecircuits.- TB334 Gui