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Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGH30N120C3H1 IC100 = 24A VCE(sat) 4.2V High speed PT IGBTs for tfi(typ) = 42ns 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 48 A TAB C IC100 TC = 100 C 24 A E ICM TC = 25 C, 1ms 115 A IA TC = 25 C 20 A EAS TC = 25 C 250 mJ G = Gate C = Collector SSOA VGE= 15V, TJ = 125 C, RG = 5 ICM = 60 A E = Emitter TAB = Collector (RBSOA) Clamped Inductive Load @VCE V 1200 PC TC = 25 C 250 W TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C Md Mounting Torque 1.13/10 Nm/lb.in. Optimized for Low Conduction and Switching Losses TL Maximum Lead Temperature for Solderi

 

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 ixgh30n120c3h1.pdf Проектирование, MOSFET, Мощность

 ixgh30n120c3h1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh30n120c3h1.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 

 

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