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Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGH30N120C3H1IC100 = 24A VCE(sat) 4.2V High speed PT IGBTs fortfi(typ) = 42ns10-50kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 48 ATABCIC100 TC = 100C 24 AEICM TC = 25C, 1ms 115 AIA TC = 25C 20 AEAS TC = 25C 250 mJG = Gate C = CollectorSSOA VGE= 15V, TJ = 125C, RG = 5 ICM = 60 AE = Emitter TAB = Collector(RBSOA) Clamped Inductive Load @VCE V 1200PC TC = 25C 250 WTJ -55 ... +150 CTJM 150 CFeaturesTstg -55 ... +150 C Md Mounting Torque 1.13/10 Nm/lb.in. Optimized for Low Conduction and Switching LossesTL Maximum Lead Temperature for Solderi

 

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 ixgh30n120c3h1.pdf Проектирование, MOSFET, Мощность

 ixgh30n120c3h1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh30n120c3h1.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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