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VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC110 TC = 110 C30 A TO-268 (IXGT) ICM TC = 25 C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125 C, RG = 10 ICM = 60 A (RBSOA) Clamped inductive load @ 600 V G E PC TC = 25 C 190 W C (TAB) TJ -55 ... +150 C TJM 150 C G = Gate, C = Collector, E = Emitter, TAB = Collector Tstg -55 ... +150 C Maximum lead temperature for soldering 300 C Features 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s 250 C Very high frequency IGBT Square RBSOA Md Mounting torque

 

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 ixgh30n60c2d1.pdf Проектирование, MOSFET, Мощность

 ixgh30n60c2d1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh30n60c2d1.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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