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High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC = 25 C, 1 ms 200 A SSOA VGE = 15 V, TVJ = 125 C, RG = 5 ICM = 90 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E PC TC = 25 C 350 W G = Gate, C = Collector, TJ -55 ... +150 C E = Emitter, TAB = Collector Features TJM 150 C Tstg -55 ... +150 C International standard packages Maximum Lead temperature for soldering 300 C JEDEC TO-268 and 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-247 AD Maximum Tab temperature for soldering SMD devices for 10 s 26

 

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 ixgh32n170.pdf Проектирование, MOSFET, Мощность

 ixgh32n170.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh32n170.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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