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IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A SSOA VGE = 15 V, TVJ = 125 C, RG = 5 ICM = 70 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E tSC TJ = 125 C, VCE = 1200 V; VGE = 15 V, RG = 10 10 s G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25 C 350 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-268 and JEDEC TO-247 AD Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. High current handling capability MOS Gate turn-on