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IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25 C to 150 C 600 V E C VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) VGES Continuous 20 V TO-247 AD VGEM Transient 30 V (IXGH) IC25 TC = 25 C60 A IC90 TC = 90 C32 A ICM TC = 25 C, 1 ms 120 A G C C E SSOA VGE= 15 V, TVJ = 125 C, RG = 22 ICM = 64 A (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G = Gate, C = Collector, E = Emitter, TAB = Collector PC TC = 25 C 200 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C High frequency IGBT and antiparallel FRED in one package Md Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. High current handling capability Maximum lead temp

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