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Advance Technical Information IXGH 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 35N120B IC2 = 70 A VCE(sat) = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V IC25 TC = 25 C70 A TO-247 AD (IXGH) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ms 140 A SSOA VGE= 15 V, TVJ = 125 C, RG = 5 W ICM = 90 A (RBSOA) Clamped inductive load @ 0.8 VCES C (TAB) G C PC TC = 25 C 300 W E TJ -55 ... +150 C G = Gate, C = Collector, TJM 150 C E = Emitter, TAB = Collector Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features International standard packages Md Mounting torque (M3) 1.1

 

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 ixgh35n120b.pdf Проектирование, MOSFET, Мощность

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 ixgh35n120b.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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