Справочник транзисторов

 

Скачать даташит для ixgh35n120c:

ixgh35n120cixgh35n120c

Advance Technical Information IXGH 35N120C VCES = 1200 V IGBT IXGT 35N120C IC25 = 70 A VCE(sat) = 4.0 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G E VGES Continuous 20 V (TAB) VGEM Transient 30 V IC25 TC = 25 C70 A TO-247 AD (IXGH) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ms 140 A SSOA VGE= 15 V, TVJ = 125 C, RG = 5 W ICM = 90 A C (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES G C E PC TC = 25 C 300 W G = Gate, C = Collector, TJ -55 ... +150 C E = Emitter, TAB = Collector TJM 150 C Tstg -55 ... +150 C Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features Md Mounting torque (M3) 1.13/10 Nm/lb.in. Internati

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 ixgh35n120c.pdf Проектирование, MOSFET, Мощность

 ixgh35n120c.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh35n120c.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.