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Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A Diode VCE(sat) 1.8V tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector E = Emitter TAB = Collector IC25 TC = 25 C (Limited by Leads) 75 A IC110 TC = 110 C 36 A IF110 TC = 110 C 20 A Features ICM TC = 25 C, 1ms 200 A SSOA VGE= 15V, TVJ = 125 C, RG = 5 ICM = 80 A Optimized for Low Conduction and (RBSOA) Clamped Inductive Load @ VCES Switching Losses Square RBSOA PC TC = 25 C 250 W Anti-Parallel Schottky Diode TJ -55 ... +150 C International Standard Package TJM 150 C Tstg -