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Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3C1w/ SiC Anti-Parallel IC110 = 36ADiode VCE(sat) 1.8Vtfi(typ) = 100nsMedium Speed Low Vsat PTIGBT for 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VG (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 V CEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = Collector E = Emitter TAB = CollectorIC25 TC = 25C (Limited by Leads) 75 AIC110 TC = 110C 36 AIF110 TC = 110C 20 AFeaturesICM TC = 25C, 1ms 200 A SSOA VGE= 15V, TVJ = 125C, RG = 5 ICM = 80 AOptimized for Low Conduction and(RBSOA) Clamped Inductive Load @ VCES Switching Losses Square RBSOAPC TC = 25C 250 W Anti-Parallel Schottky Diode TJ -55 ... +150 C International Standard PackageTJM 150 CTstg -