Скачать даташит для ixgh36n60b3d1:

GenX3TM 600V IGBT VCES = 600V IXGH36N60B3D1 w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 110 C 36 A G = Gate C = Collector IF110 TC = 110 C 30 A E = Emitter TAB = Collector ICM TC = 25 C, 1ms 200 A SSOA VGE= 15V, TVJ = 125 C, RG = 5 ICM = 80 A Features (RBSOA) Clamped Inductive Load VCE VCES Optimized for Low Conduction and PC TC = 25 C 250 W Switching Losses TJ -55 ... +150 C Square RBSOA TJM 150 C Anti-Parallel Ultra Fast Diode International Standard Package Tstg -55 ... +150 C TL 1.6mm (0.062 in.) from Case for 10s 300 C Advantages TSOLD Plastic Body for 10s