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GenX3TM 600V IGBT VCES = 600VIXGH36N60B3D1w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 36 AG = Gate C = CollectorIF110 TC = 110C 30 AE = Emitter TAB = CollectorICM TC = 25C, 1ms 200 ASSOA VGE= 15V, TVJ = 125C, RG = 5 ICM = 80 AFeatures(RBSOA) Clamped Inductive Load VCE VCES Optimized for Low Conduction andPC TC = 25C 250 W Switching LossesTJ -55 ... +150 C Square RBSOA TJM 150 CAnti-Parallel Ultra Fast Diode International Standard PackageTstg -55 ... +150 CTL 1.6mm (0.062 in.) from Case for 10s 300 CAdvantagesTSOLD Plastic Body for 10s