Скачать даташит для ixtk100n25p_ixtt100n25p_ixtq100n25p:

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID25 TC = 25 C 100 A ID(RMS) External lead current limit 75 A TO-3P (IXTQ) IDM TC = 25 C, pulse width limited by TJM 250 A IAR TC = 25 C60 A EAR TC = 25 C60 mJ G EAS TC = 25 C 2.0 J D (TAB) S dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns TJ 150 C, RG = 4 TO-268 (IXTT) PD TC = 25 C 600 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C G S D (TAB) TL 1.6 mm (0.062 in.) from case for 10 s 300 C TSOLD Plastic body for 10 s 260 C G = Gat