Скачать даташит для ixtk100n25p_ixtt100n25p_ixtq100n25p:

IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID25 TC = 25 C 100 AID(RMS) External lead current limit 75 ATO-3P (IXTQ)IDM TC = 25 C, pulse width limited by TJM 250 AIAR TC = 25 C60 AEAR TC = 25 C60 mJGEAS TC = 25 C 2.0 JD(TAB)Sdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsTJ 150 C, RG = 4 TO-268 (IXTT)PD TC = 25 C 600 WTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CGSD (TAB)TL 1.6 mm (0.062 in.) from case for 10 s 300 CTSOLD Plastic body for 10 s 260 CG = Gat