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VDSS = 200 V IXTK 140N20P PolarHTTM ID25 = 140 A Power MOSFET RDS(on) 18 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 140 A D (TAB) S ID(RMS) External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 280 A G = Gate D = Drain S = Source TAB = Drain IAR TC = 25 C60 A EAR TC = 25 C 100 mJ EAS TC = 25 C4 J Features dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns l International standard package TJ 150 C, RG = 4 l Unclamped Inductive Switching (UIS) PD TC = 25 C 800 W rated l Low package inductance TJ -55 ... +175 C - easy to drive and to protect TJM 175 C Tstg -55

 

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 ixtk140n20p.pdf Проектирование, MOSFET, Мощность

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