Скачать даташит для ixxk110n65b4h1:

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V Tab VGES Continuous 20 V PLUS247 (IXXX) VGEM Transient 30 V IC25 TC = 25 C (Chip Capability) 240 A ILRMS Terminal Current Limit 160 A IC110 TC = 110 C 110 A IF110 TC = 110 C 78 A G G ICM TC = 25 C, 1ms 630 A C Tab E SSOA VGE = 15V, TVJ = 150 C, RG = 2 ICM = 220 A (RBSOA) Clamped Inductive Load @VCE VCES G = Gate E = Emitter C = Collector Tab = Collector tsc VGE = 15V, VCE = 360V, TJ = 150 C 10 s (SCSOA) RG = 82 , Non Repetitive PC TC = 25 C 880 W Features TJ -55 ... +175 C Optimized for 10-3