Скачать даташит для ixxk110n65b4h1:

VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)VGEM Transient 30 VIC25 TC = 25C (Chip Capability) 240 AILRMS Terminal Current Limit 160 AIC110 TC = 110C 110 AIF110 TC = 110C 78 AGGICM TC = 25C, 1ms 630 ACTabESSOA VGE = 15V, TVJ = 150C, RG = 2 ICM = 220 A(RBSOA) Clamped Inductive Load @VCE VCESG = Gate E = EmitterC = Collector Tab = Collectortsc VGE = 15V, VCE = 360V, TJ = 150C 10 s(SCSOA) RG = 82, Non RepetitivePC TC = 25C 880 WFeaturesTJ -55 ... +175 C Optimized for 10-3