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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 3m @10V 60V 130A 4.5m @4.5V DESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High Power and current handing capability Good stability and uniformity with high EAS Load switch Excellent package for good heat dissipation High density cell design for ultra low RDS(ON) Lead free product is acquired APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits Power management MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAC13TH06 = Part No. CJAC Solid dot=Pin1

 

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 cjac13th06.pdf Проектирование, MOSFET, Мощность

 cjac13th06.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cjac13th06.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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