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SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 MAX F F L 2.30 Collector-Base VCBO BC557 -50 V M 0.45 MAX Voltage N 1.00 1 2 3 BC558 -30 1. COLLECTOR BC556 -65 2. BASE Collector-Emitter 3. EMITTER VCEO BC557 -45 V Voltage BC558 -30 TO-92 BC556 -5 Emitter-Base VEBO BC557 -5 V Voltage BC558 -5 BC556 -100 IC Collector Current BC557 -100 mA BC558 -100 BC556 100 IE Emitter Current BC557 100 mA BC558 100 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range
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bc556 bc557 bc558.pdf Проектирование, MOSFET, Мощность
bc556 bc557 bc558.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
bc556 bc557 bc558.pdf База данных, Инновации, ИМС, Транзисторы
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