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KF15N50N SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode _ A + 15.60 0.20 _ B 4.80 + 0.20 power supplies. _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 FEATURES _ G 3.50 + 0.20 D _ H 13.90 0.20 + VDSS(Min.)= 500V, ID= 15A _ E I 12.76 + 0.20 _ J 23.40 + 0.20 Drain-Source ON Resistance M d K 1.5+0.15-0.05 RDS(ON)=0.42(Max.) @VGS =10V _ L 16.50 + 0.30 _ M 1.40 + 0.20 Qg(typ.) =35nC _ N 13.60 + 0.20 P P T _ O 9.60 + 0.20 _ + P 5.45 0.30 Q _ 3.20 + 0.10 1 2 3 _ + R 18.70 0.20 MAXIMUM RATING (Tc=25 ) T 0.60+0.1

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 kf15n50n.pdf Проектирование, MOSFET, Мощность

 kf15n50n.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 kf15n50n.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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