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SEMICONDUCTOR KN4400S/4401S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS _ + A 2.93 0.20 FEATURES B 1.30+0.20/-0.15 C 1.30 MAX Complementary to the KN4402S/4403S 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 Suffix U Qualified to AEC-Q101. 1 G 1.90 ex) KN4401S-RTK/HU H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 P 7 Q 0.1 MAX M MAXIMUM RATING (Ta=25 ) 1. EMITTER CHARACTERISTIC SYMBOL RATING UNIT 2. BASE VCBO Collector-Base Voltage 60 V 3. COLLECTOR VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V SOT-23 IC Collector Current 600 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note * Package Mounted On 99.5% Alumina 10 8 0.6 ) M