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SEMICONDUCTOR KTD2854 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. B D POWER AMPLIFIER APPLICATION. FEATURES DIM MILLIMETERS P High DC Current Gain DEPTH 0.2 A 7.20 MAX hFE=2000(Min.) (VCE=2V, IC=1A) B 5.20 MAX C C 0.60 MAX S Low Saturation Voltage D 2.50 MAX Q E 1.15 MAX K VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA) F 1.27 G 1.70 MAX Complementary to KTB2234. H 0.55 MAX FF _ J 14.00 + 0.50 K 0.35 MIN HH H _ L 0.75 + 0.10 E M 4 M N 25 MAXIMUM RATINGS (Ta=25 ) O 1.25 L 1 2 3 H P 1.50 CHARACTERISTIC SYMBOL RATING UNIT Q 0.10 MAX N N _ R 12.50 + 0.50 1. EMITTER S 1.00 VCBO Collector-Base Voltage 100 V 2. COLLECTOR VCEO Collector-Emitter Voltage 100 V 3. BASE VEBO Emitter-Base Voltage 8 V TO-92L IC DC 2 Collector Current A ICP Pulse 3 IB Base Current 0.5 A