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SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=100V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX C C MAXIMUM RATING (Ta=25 ) J 1.37 MAX K 0.50 CHARACTERISTIC SYMBOL RATING UNIT L 1.50 MAX M M M 2.54 K VCBO Collector-Base Voltage 100 V N 4.70 MAX O 2.60 1 2 3 VCEO Collector-Emitter Voltage 100 V P 1.50 MAX J Q 1.50 _ 1. BASE R 9.50 + 0.20 VEB0 Emitter-Base Voltage 5 V _ S 8.00 + 0.20 2. COLLECTOR (HEAT SINK) T 2.90 MAX IC DC 5 3. EMITTER Collector Current A ICP Pules 8 IB Base Current 0.12 A TO-220AB Collector Power Dissipation PC 65 W (Tc=25