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SEMICONDUCTOR TIP122TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ARAPPLICATIONS.S FEATURES PD High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERSA 10.30 MAX High Collector Breakdown Voltage : VCEO=100V(Min.)B 15.30 MAXC 0.80_+D 3.60 0.20TE 3.00F 6.70 MAX_G 13.60 + 0.50LH 5.60 MAXC CMAXIMUM RATING (Ta=25 )J 1.37 MAXK 0.50CHARACTERISTIC SYMBOL RATING UNITL 1.50 MAXM MM 2.54KVCBOCollector-Base Voltage 100 V N 4.70 MAXO 2.601 2 3VCEOCollector-Emitter Voltage 100 V P 1.50 MAXJQ 1.50_1. BASE R 9.50 + 0.20VEB0Emitter-Base Voltage 5 V_S 8.00 + 0.202. COLLECTOR (HEAT SINK)T 2.90 MAXICDC 53. EMITTERCollector Current AICPPules 8IBBase Current 0.12 ATO-220ABCollector Power DissipationPC65 W(Tc=25