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SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax 25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0 M CHARACTERISTIC SYMBOL RATING UNIT K 1.8 MAX _ + L 20.5 0.5 VCBO Collector-Base Voltage 100 V M 2.8 _ P 5.45 + 0.2 VCEO Collector-Emitter Voltage 100 V 1 2 3 _ 3.2 0.2 Q + T 0.6+0.3/-0.1 VEBO 1. BASE Emitter-Base Voltage 5 V 2. COLLECTOR IC Collector Current 25 A 3. EMITTER IB Base Current 5.0 A Collector Power Dissipation PC TO-3P(N) 125 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACT