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SEMICONDUCTOR TIP42C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP41C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D 3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L VCBO -100 V Collector-Base Voltage H 5.60 MAX C C J 1.37 MAX VCEO -100 V Collector-Emitter Voltage K 0.50 L 1.50 MAX M M VEBO Emitter-Base Voltage -5 V M 2.54 K N 4.70 MAX IC DC -6 O 2.60 1 2 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse -10 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 IB Base Current -2 A 2. COLLECTOR (HEAT SINK) T 2.90 MAX 3. EMITTER Ta=25 2 W Collector Power PC Dissipation 65 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25