Скачать даташит для 2sa1812:

SMD Type Transistors PNP Transistors 2SA1812 1.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf 1us at IC =-100mA. 0.42 0.1 0.46 0.1 High-voltage Switching Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -0.5 A Collector Current - Pulse ICP -1 0.5 Collector Power Dissipation PC W 2 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Note.1 When mounted on a 40X40X0.7mm ceramic board. Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -400 Collector- emitter breakdown v