Скачать даташит для 2sa1812:

SMD Type TransistorsPNP Transistors2SA18121.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf :1us at IC =-100mA.0.42 0.10.46 0.1 High-voltage Switching Transistor1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -0.5A Collector Current - Pulse ICP -10.5 Collector Power Dissipation PC W2 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150Note.1: When mounted on a 40X40X0.7mm ceramic board. Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -400 Collector- emitter breakdown v