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C945 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity hFE(IC =0.1mA) hFE(IC=2mA)=0.95(Typ.) Low noise Complementary to A733 MARKING CR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5