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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are LMBT2222AWT1G housed in the SOT 323/SC 70 package which S-LMBT2222AWT1G is designed for low power surface mount applications. We declare that the material of product 3 compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS CASE 419 02, STYLE 3 SOT 323 /SC 70 Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base Voltage V CBO 75 Vdc 3 Emitter Base Voltage V EBO 6.0 Vdc COLLECTOR Collector Current Continuous I C 600 mAdc 1 BASE THERMAL CHARACTERISTICS 2 EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR 5

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 lmbt2222awt1g.pdf Проектирование, MOSFET, Мощность

 lmbt2222awt1g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 lmbt2222awt1g.pdf База данных, Инновации, ИМС, Транзисторы