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MMG75S120B6HN 1200V 75A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses TJmax =175 C APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherwise specified C Symbol Parameter/Test Conditions Values Unit VCES Collector Emitter Voltage TJ=25 1200 V VGES Gate Emitter Voltage 20 TC=25 100 IC DC Collector Current TC=95 75 A ICM Repetitive Peak Collector Current tp=1ms 150 Ptot Power Dissipation Per IGBT 468 W Di

 

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 mmg75s120b6hn.pdf Проектирование, MOSFET, Мощность

 mmg75s120b6hn.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmg75s120b6hn.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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