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MMG75S120B6UC 1200V 75A IGBT Module November 2018 Preliminary RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery APPLICATIONS Welding Machine Power Supplies Others IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T =25 C unless otherwise specified) C Symbol Parameter/Test Conditions Values Unit VCES TJ=25 1200 Collector Emitter Voltage V VGES Gate Emitter Voltage 20 TC=25 ,TJmax=175 110 IC DC Collector Current TC=90 ,TJmax=175 75 A ICM Repetitive Peak Collector Current tp=1ms 150 Ptot TC=25 ,TJmax=175 405 W Power Dissipation Per IGBT Diode-inverter ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise specified) C Symbol Parameter/Test

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 mmg75s120b6uc.pdf Проектирование, MOSFET, Мощность

 mmg75s120b6uc.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmg75s120b6uc.pdf База данных, Инновации, ИМС, Транзисторы