Справочник транзисторов.

 

Скачать даташит для mmg75s120b6uc:

mmg75s120b6ucmmg75s120b6uc

MMG75S120B6UC1200V 75A IGBT ModuleNovember 2018 Preliminary RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inverterABSOLUTE MAXIMUM RATINGS(T =25C unless otherwise specified)CSymbol Parameter/Test Conditions ValuesUnitVCES TJ=25 1200Collector Emitter VoltageVVGESGate Emitter Voltage 20TC=25,TJmax=175 110ICDC Collector CurrentTC=90,TJmax=175 75 AICMRepetitive Peak Collector Current tp=1ms 150Ptot TC=25,TJmax=175 405 WPower Dissipation Per IGBTDiode-inverterABSOLUTE MAXIMUM RATINGS (T =25C unless otherwise specified)CSymbol Parameter/Test

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 mmg75s120b6uc.pdf Проектирование, MOSFET, Мощность

 mmg75s120b6uc.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmg75s120b6uc.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.