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MMGTU75J120U 1200V 75A IGBT Module July 2015 Version 0 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 Package APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherwise specified C Symbol Parameter/Test Conditions Values Unit VCES Collector Emitter Voltage TJ=25 1200 V VGES Gate Emitter Voltage 20 TC=25 100 IC DC Collector Current TC=80 75 A ICM Repetitive Peak Collector Current tp=1ms 150 Ptot Power Dissipation Per IGBT 410 W Diode-inverter ABSOLUTE MAXIMUM RATINGS T =25 C unless otherw

 

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 mmgtu75j120u.pdf Проектирование, MOSFET, Мощность

 mmgtu75j120u.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmgtu75j120u.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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