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MMGTU75J120U1200V 75A IGBT ModuleJuly 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 PackageAPPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems UPS systemsIGBT-inverterABSOLUTE MAXIMUM RATINGS T =25C unless otherwise specifiedCSymbol Parameter/Test Conditions Values UnitVCES Collector Emitter Voltage TJ=25 1200VVGES Gate Emitter Voltage 20TC=25 100IC DC Collector CurrentTC=80 75 AICM Repetitive Peak Collector Current tp=1ms 150Ptot Power Dissipation Per IGBT 410 WDiode-inverterABSOLUTE MAXIMUM RATINGS T =25C unless otherw

 

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 mmgtu75j120u.pdf Проектирование, MOSFET, Мощность

 mmgtu75j120u.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmgtu75j120u.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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